Tantalum Sputtering Target Manufacturing Process: Key Steps and Technological Breakthroughs

1. Raw Material Purification
The production of tantalum targets begins with high-purity tantalum powder (≥99.95%), refined through sodium thermal reduction to eliminate impurities like niobium and iron. This step ensures compliance with semiconductor-grade standards (4N5 purity).

2. Cold and Hot Forging Techniques
Cold Forging: The purified tantalum ingot undergoes cold forging under pressures exceeding 200 MPa to achieve preliminary densification and structural uniformity.

Hot Forging: Subsequent hot forging at 1,200–1,400°C enhances ductility and reduces internal voids, critical for large-diameter targets (e.g., 12-inch).

Multi-stage Process: Alternating cold and hot forging cycles optimize grain refinement, achieving a final grain size of <50 μm.

3. Acid Washing and Heat Treatment
Acid Washing: Post-forging surfaces are cleaned with nitric-hydrofluoric acid solutions to remove oxides and contaminants.

Annealing: Vacuum annealing (1,000–1,200°C) relieves stress and stabilizes microstructure, ensuring consistent sputtering performance.

4. Precision Machining and Quality Control
CNC Machining: Targets are shaped into specifications (e.g., 300–500 mm diameter) using computer-controlled lathes.

Defect Detection: Ultrasonic testing and electron microscopy verify density (>98% theoretical) and purity.

5. Applications in Semiconductor Manufacturing
Tantalum targets are vital for copper interconnect barrier layers in 5nm/3nm chips, preventing copper diffusion and improving device reliability.

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