Tantalum Target

Tantalum targets as deposition material in processes such as chemical vapor deposition (CVD) and physical vapor deposition (PVD) maintain high performance even in corrosive gas environments. During the sputtering deposition of tantalum thin films, the substrate temperature is typically maintained between 50°C and 200°C. The base pressure usually ranges from 10 torr to 8 torr, with an argon background pressure varying from 0.2 to 10 mtorr. The high melting point of tantalum target as evaporation material makes it work stably in high temperature environment, especially suitable for high temperature vacuum coating process. High-purity tantalum target plates can be utilized to deposit thin layers of tantalum onto silicon wafers through a sputtering process. The Ta sputtering target at high temperature can ensure the formation of high quality, uniform and stable tantalum film on the surface of the material. Tantalum targets can ensure uniform film deposition during sputtering deposition. Tantalum targets plays an important roles in the production of the semiconductor logic chips, including DRAM and 3D-NAND memory chips.

In addition to Tantalum Target, we also produceTantalum Sheet & Plate, Tantalum Ingot, Tantalum Pellets, Tantalum Filament, Tantalum Coil, Tantalum pot, Tantalum Foil, Tantalum Rod&Bar, Tantalum Wire, Tantalum Disc, Tantalum Shield, Tantalum machined parts, Tantalum Spherical Powder. They meet Standard ASTM B 364, ASTM B 365, ASTM B 708, ASTM B 521, ASTM F560 R05200, R05400.