Fortu Tech is an ISO Certified Corporation located in China and specializes in manufacturing Pure Tantalum Target. We have more than 20 years of production experience. Our products are Conflict Free material.
| Common specifications | ||||||||
| Thickness inch | 0.15 | 0.2 | 0.25 | 0.3 | 0.35 | 0.4 | 0.45 | 0.5 |
| Thickness mm | 3.81 | 5.08 | 6.35 | 7.62 | 8.89 | 10.16 | 11.43 | 12.7 |
Tantalum targets have excellent corrosion resistance, so they can be stabilized under conditions such as strong acids. The tantalum target has a high melting point, allowing it to be coated at high temperatures.
Tantalum targets have high density and excellent mechanical properties.
High purity tantalum target has good deposition effect.
| ASTM B708 R05200 Chemical Requirements Tantalum SputteringTarget | |||||||||||
| Element% | C | N | O | H | Ti | Nb | Fe | Si | W | Ni | Mo |
| Content Maximum % | 0.01 | 0.01 | 0.015 | 0.0015 | 0.01 | 0.1 | 0.01 | 0.005 | 0.05 | 0.01 | 0.02 |
| ASTM B708 R05400 Chemical Requirements Tantalum Sputtering Target | |||||||||||
| Element% | C | N | O | H | Ti | Nb | Fe | Si | W | Ni | Mo |
| Content Maximum % | 0.01 | 0.01 | 0.03 | 0.0015 | 0.01 | 0.1 | 0.01 | 0.005 | 0.05 | 0.01 | 0.02 |
| The specification of ASTM B708 | |
| ASTM B 708 R05200 | Unalloyed tantalum, electron-beam furnace or vacuum-arc melt, or both, tantalum targett |
| ASTM B 708 R05400 | Unalloyed tantalum, powder-metallurgy consolidation tantalum target |
| ASTM B 708 R05255 | Tantalum alloy, 90 % tantalum, 10 %tungsten, electron-beam furnace of vacuum-arc melt, or both, Ta10W target |
| ASTM B 708 R05252 | Tantalum alloy, 97.5 % tantalum, 2.5 %tungsten, electron-beam furnace or vacuum-arc melt, or both, Ta2.5W target |
| ASTM B 708 R05240 | Tantalum alloy, 60 % tantalum, 40 % niobium, electron-beam furnace or vacuum-arc melt, Ta40Nb target |
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| Mechanical Properties of Ta Target ASTM B708 | |||
| Thickness | Ultimate Tensile Strength | Yield Strength | Elongation |
| Greater than 0.06" | 25 000 min, psi | 15 5000 min, psi | 30% |
| Greater than 0.06" | 172 min, Mpa | 103 min, Mpa | 30% |
| Cas No. of Ta | 7440-25-7 |
| EINECS No.of Ta | 231-135-5 |
| Element class of Ta | Transition metal element |
| Relative atomic mass of Ta | 180.94788(12C = 12.0000) |
| Density of Ta | 16650kg/m3；16.654g/cm3 |
| Melting Point of Ta | 2996 ℃ |
| Boiling Point of Ta | 5425 ℃ |
| Hardness of Ta | 6.5 |
| Position of Ta | Period six, group VB, region d |
| Atomic volume of Ta | 10.90cm3/mol |
| Linear expansion coefficient of Ta 0～100℃ | 6.5×10-6 K-1 |
| Critical temperature of superconducting transition of Ta | 4.38K |
| Temperature Coefficient of Resistivity of Ta | 3820 ppm/°C |
Tantalum Targets - Premium Deposition Materials for Semiconductor & Coating Applications: Superior Performance in CVD & PVD Processes: High-purity tantalum targets deliver exceptional deposition performance in: Chemical vapor deposition (CVD) systems, Physical vapor deposition (PVD) applications, Reactive sputtering processes: Maintain stable tantalum sputtering rates even in highly corrosive gas environments, Tantalum evaporation materials withstand extreme temperatures (melting point: 3017°C).
Optimal Sputtering Parameters for Tantalum Thin Films: Substrate temperature range: 50°C - 200°C for optimal film adhesion, Argon working pressure: 0.2 - 10 mTorr for controlled deposition, Tantalum sputtering targets produce: High-density, low-defect films, Uniform thickness distribution (±3% variation), Excellent step coverage for complex geometries.
Semiconductor Manufacturing Applications for tantalum target: Critical for advanced chip fabrication: DRAM memory chips, 3D-NAND flash memory, Logic device interconnects.
Tantalum target plates enable: Barrier layer deposition (preventing copper diffusion), Adhesion layer formation, High-k dielectric integration.
High-Quality Thin Film Deposition, 5N5 (99.9995%) pure tantalum targets ensure: Minimal impurity contamination, Consistent electrical properties, Superior film uniformity. Standard target configurations: Tantalum Planar rectangular targets, Tantalum Rotary cylindrical targets, Tantalum Bonded target assemblies.
Why Choose Tantalum Targets? Ultra-high purity (up to 99.9995%), Multiple density options (high-density & low-density), Custom geometries and bonding services, Strict quality control for defect-free surfaces.
In addition to Tantalum Target, we also produceTantalum Sheet & Plate, Tantalum Ingot, Tantalum Pellets, Tantalum Filament, Tantalum Coil, Tantalum pot, Tantalum Foil, Tantalum Rod&Bar, Tantalum Wire, Tantalum Disc, Tantalum Shield, Tantalum machined parts, Tantalum Spherical Powder. They meet Standard ASTM B 364, ASTM B 365, ASTM B 708, ASTM B 521, ASTM F560 R05200, R05400.
Add: 399 Chunhe Road, Baoshan District, Shanghai, China, 200941
Tel: +86 21 56656030
Email: info@fortu-tech.com
